Tẹ-Pack IGBT
Tẹ-pack IGBT (IEGT)
| ORISI | VDRM V | VRRM V | IT (AV)@80℃ A | ITGQM @ CS A / µF | ITSM@10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc ℃/W | |
| CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤2.2 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤2.5 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| CSG15F2500 | 2500 | 17 | 570 | 1500 | 3 | 10 | ≤2.8 | ≤1.50 | ≤0.90 | 125 | 0.027 |
| CSG20H2500 | 2500 | 17 | 830 | 2000 | 6 | 16 | ≤2.8 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG25H2500 | 2500 | 16 | 867 | 2500 | 6 | 18 | ≤3.1 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤2.5 | ≤1.50 | ≤0.33 | 125 | 0.012 |
| CSG10F2500 | 2500 | 15 | 830 | 1000 | 2 | 12 | ≤2.5 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG06D4500 | 4500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | ≤1.90 | ≤0.50 | 125 | 0.05 |
| CSG10F4500 | 4500 | 16 | 320 | 1000 | 1 | 7 | ≤3.5 | 1.9 | ≤0.35 | 125 | 0.03 |
| CSG20H4500 | 4500 | 16 | 745 | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤0.85 | 125 | 0.017 |
| CSG30J4500 | 4500 | 16 | 870 | 3000 | 6 | 16 | ≤4.0 | ≤2.2 | ≤0.60 | 125 | 0.012 |
| CSG40L4500 | 4500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤2.1 | ≤0.58 | 125 | 0.011 |
Akiyesi:D- pelu dapakan iode, A-lai diode apakan
Ni aṣa, awọn modulu IGBT olubasọrọ solder ni a lo ninu jia iyipada ti eto gbigbe DC rọ.Awọn module package jẹ nikan ẹgbẹ ooru wọbia.Agbara agbara ti ẹrọ jẹ opin ati pe ko dara lati sopọ ni jara, igbesi aye ti ko dara ni afẹfẹ iyọ, gbigbọn gbigbọn ti ko dara tabi rirẹ gbona.
Awọn titun tẹ-olubasọrọ ga-agbara tẹ-pack IGBT ẹrọ ko nikan patapata solves awọn isoro ti ṣ'ofo ni soldering ilana, gbona rirẹ ti soldering ohun elo ati kekere ṣiṣe ti nikan-apa ooru wọbia sugbon tun ti jade ni gbona resistance laarin orisirisi irinše, gbe iwọn ati iwuwo.Ati ni pataki ilọsiwaju iṣẹ ṣiṣe ati igbẹkẹle ẹrọ IGBT.O dara julọ lati ni itẹlọrun agbara giga, foliteji giga, awọn ibeere igbẹkẹle giga ti eto gbigbe DC rọ.
Yipada iru olubasọrọ solder nipasẹ titẹ-pack IGBT jẹ pataki.
Niwon 2010, Runau Electronics ti ṣe alaye lati ṣe agbekalẹ ẹrọ titun tẹ-pack IGBT ẹrọ ati ṣaṣeyọri iṣelọpọ ni 2013. Iṣẹ naa jẹ ifọwọsi nipasẹ ijẹrisi orilẹ-ede ati pe aṣeyọri gige-eti ti pari.
Bayi a le ṣe iṣelọpọ ati pese akopọ tẹ-pack IGBT ti sakani IC ni 600A si 3000A ati ibiti VCES ni 1700V si 6500V.Ireti nla ti idii-iṣiro IGBT ti a ṣe ni Ilu China lati lo ni China rọ ẹrọ gbigbe DC ni a nireti gaan ati pe yoo di okuta mile kilasi agbaye miiran ti ile-iṣẹ itanna agbara China lẹhin ọkọ oju-irin ina-iyara giga.
Iṣafihan kukuru ti Ipo Aṣoju:
1. Ipo: Tẹ-pack IGBT CSG07E1700
●Awọn abuda itanna lẹhin apoti ati titẹ
● Yiyipadani afiweti sopọdiode imularada yarapari
● Paramita:
Ti won won iye (25℃)
a.Foliteji Emitter olugba: VGES=1700（V）
b.Ẹnubodè Emitter Foliteji: VCES=±20(V)
c.Akojọpọ Lọwọlọwọ: IC=800（A）ICP=1600（A）
d.Pipada Agbara Alakojọpọ: PC=4440 (W)
e.Ooru Ipapọ Ṣiṣẹ: Tj=－20~125℃
f.Ibi ipamọ otutu: Tstg=－40~125℃
Akiyesi: ẹrọ yoo bajẹ ti o ba kọja iye ti a ṣe
ItannaCharacteristics, TC 125 ℃, Rth (gbona resistance tiipade siirú)ko si
a.Jijo ẹnu-ọna lọwọlọwọ: IGES=± 5（μA）
b.Idilọwọ Emitter Olukojọpọ ICES lọwọlọwọ = 250 (mA)
c.Akojọpọ Emitter Saturation Foliteji: VCE(joko)=6(V)
d.Ẹnu-ọna Emitter Foliteji: VGE(th)=10(V)
e.Tan akoko: Ton=2.5μs
f.Pa akoko: Toff=3μs
2. Ipo: Tẹ-pack IGBT CSG10F2500
●Awọn abuda itanna lẹhin apoti ati titẹ
● Yiyipadani afiweti sopọdiode imularada yarapari
● Paramita:
Ti won won iye (25℃)
a.Foliteji Emitter olugba: VGES=2500（V）
b.Ẹnubodè Emitter Foliteji: VCES=±20(V)
c.Akojọpọ Lọwọlọwọ: IC=600（A）ICP=2000（A）
d.Pipada Agbara Alakojọpọ: PC=4800 (W)
e.Ooru Ipapọ Ṣiṣẹ: Tj=－40~125℃
f.Ibi ipamọ otutu: Tstg=－40~125℃
Akiyesi: ẹrọ yoo bajẹ ti o ba kọja iye ti a ṣe
ItannaCharacteristics, TC 125 ℃, Rth (gbona resistance tiipade siirú)ko si
a.Jijo ẹnu-ọna lọwọlọwọ: IGES=±15（μA）
b.Idilọwọ Emitter Olukojọpọ ICES lọwọlọwọ = 25 (mA)
c.Foliteji Saturation Olugba Emitter: VCE(joko)=3.2 (V)
d.Ẹnu-ọna Emitter Foliteji: VGE(th)=6.3(V)
e.Tan akoko: Ton=3.2μs
f.Pa akoko: Toff=9.8μs
g.Diode Foliteji siwaju: VF = 3.2 V
h.Diode Yiyipada Akoko Igbapada: Trr=1.0 μs
3. Ipo: Tẹ-pack IGBT CSG10F4500
●Awọn abuda itanna lẹhin apoti ati titẹ
● Yiyipadani afiweti sopọdiode imularada yarapari
● Paramita:
Ti won won iye (25℃)
a.Foliteji Emitter olugba: VGES=4500（V）
b.Ẹnubodè Emitter Foliteji: VCES=±20(V)
c.Akojọpọ Lọwọlọwọ: IC=600（A）ICP=2000（A）
d.Pipada Agbara Alakojọpọ: PC=7700 (W)
e.Ooru Ipapọ Ṣiṣẹ: Tj=－40~125℃
f.Ibi ipamọ otutu: Tstg=－40~125℃
Akiyesi: ẹrọ yoo bajẹ ti o ba kọja iye ti a ṣe
ItannaCharacteristics, TC 125 ℃, Rth (gbona resistance tiipade siirú)ko si
a.Jijo ẹnu-ọna lọwọlọwọ: IGES=±15（μA）
b.Idilọwọ Emitter Olukojọpọ ICES lọwọlọwọ = 50 (mA)
c.Foliteji Saturation Olugba Emitter: VCE(joko)=3.9 (V)
d.Ẹnu-ọna Emitter Foliteji: VGE(th)=5.2 (V)
e.Tan akoko: Ton=5.5μs
f.Pa akoko: Toff=5.5μs
g.Diode Foliteji siwaju: VF = 3.8 V
h.Diode Yiyipada Akoko Igbapada: Trr=2.0 μs
Akiyesi:Tẹ-pack IGBT jẹ anfani ni igbẹkẹle ẹrọ giga ti igba pipẹ, resistance giga si ibajẹ ati awọn abuda ti ọna asopọ tẹ, rọrun lati gba iṣẹ ni ẹrọ jara, ati ni afiwe pẹlu GTO thyristor ibile, IGBT jẹ ọna awakọ foliteji. .Nitorinaa, o rọrun lati ṣiṣẹ, ailewu ati ibiti o n ṣiṣẹ jakejado.