Chip Thyristor
Chip Thyristor
Chip thyristor ti a ṣe nipasẹ RUNAU Electronics ni ipilẹṣẹ ni ipilẹṣẹ nipasẹ boṣewa iṣelọpọ GE ati imọ-ẹrọ eyiti o ni ibamu ti boṣewa ohun elo AMẸRIKA ati pe o peye nipasẹ awọn alabara kariaye.O jẹ ifihan ni awọn abuda ailagbara ti o lagbara ti o lagbara, igbesi aye iṣẹ gigun, foliteji giga, lọwọlọwọ nla, isọdọtun ayika ti o lagbara, bbl Ni ọdun 2010, RUNAU Electronics ṣe agbekalẹ ilana tuntun ti chirún thyristor eyiti o darapọ anfani ibile ti GE ati imọ-ẹrọ Yuroopu, iṣẹ ṣiṣe ati ṣiṣe won iṣapeye gidigidi.
Paramita:
| Iwọn opin mm | Sisanra mm | Foliteji V | Ẹnubodè Dia. mm | Cathode Inner Dia. mm | Cathode Jade Dia. mm | Tjm ℃ |
| 25.4 | 1.5± 0.1 | ≤2000 | 2.5 | 5.6 | 20.3 | 125 |
| 25.4 | 1.6-1.8 | 2200-3500 | 2.6 | 5.6 | 15.9 | 125 |
| 29.72 | 2± 0.1 | ≤2000 | 3.3 | 7.7 | 24.5 | 125 |
| 32 | 2± 0.1 | ≤2000 | 3.3 | 7.7 | 26.1 | 125 |
| 35 | 2± 0.1 | ≤2000 | 3.8 | 7.6 | 29.1 | 125 |
| 35 | 2.1-2.4 | 2200-4200 | 3.8 | 7.6 | 24.9 | 125 |
| 38.1 | 2± 0.1 | ≤2000 | 3.3 | 7.7 | 32.8 | 125 |
| 40 | 2± 0.1 | ≤2000 | 3.3 | 7.7 | 33.9 | 125 |
| 40 | 2.1-2.4 | 2200-4200 | 3.5 | 8.1 | 30.7 | 125 |
| 45 | 2.3 ± 0.1 | ≤2000 | 3.6 | 8.8 | 37.9 | 125 |
| 50.8 | 2.5± 0.1 | ≤2000 | 3.6 | 8.8 | 43.3 | 125 |
| 50.8 | 2.6-2.9 | 2200-4200 | 3.8 | 8.6 | 41.5 | 125 |
| 50.8 | 2.6-2.8 | 2600-3500 | 3.3 | 7 | 41.5 | 125 |
| 55 | 2.5± 0.1 | ≤2000 | 3.3 | 8.8 | 47.3 | 125 |
| 55 | 2.5-2.9 | ≤4200 | 3.8 | 8.6 | 45.7 | 125 |
| 60 | 2.6-3.0 | ≤4200 | 3.8 | 8.6 | 49.8 | 125 |
| 63.5 | 2.7-3.1 | ≤4200 | 3.8 | 8.6 | 53.4 | 125 |
| 70 | 3.0-3.4 | ≤4200 | 5.2 | 10.1 | 59.9 | 125 |
| 76 | 3.5-4.1 | ≤4800 | 5.2 | 10.1 | 65.1 | 125 |
| 89 | 4-4.4 | ≤4200 | 5.2 | 10.1 | 77.7 | 125 |
| 99 | 4.5-4.8 | ≤3500 | 5.2 | 10.1 | 87.7 | 125 |
Sipesifikesonu imọ-ẹrọ:
RUNAU Electronics pese agbara semikondokito awọn eerun ti alakoso iṣakoso thyristor ati ki o yara yipada thyristor.
1. Low on-ipinle foliteji ju
2. Awọn sisanra ti aluminiomu Layer jẹ diẹ sii ju 10 microns
3. Double Layer Idaabobo mesa
Awọn imọran:
1. Lati le jẹ iṣẹ ti o dara julọ, chirún naa yoo wa ni ipamọ ni nitrogen tabi ipo igbale lati ṣe idiwọ iyipada foliteji ti o ṣẹlẹ nipasẹ ifoyina ati ọriniinitutu ti awọn ege molybdenum.
2. Nigbagbogbo pa awọn ërún dada mọ, jọwọ wọ ibọwọ ati ki o ma fi ọwọ kan awọn ërún pẹlu igboro ọwọ
3. Ṣiṣẹ farabalẹ ni ilana lilo.Maṣe ba oju oju resini ti chirún ati Layer aluminiomu ni agbegbe ọpá ti ẹnu-bode ati cathode
4. Ni idanwo tabi encapsulation, jọwọ ṣe akiyesi pe afiwera, fifẹ ati ipa dimole imuduro gbọdọ wa ni ibamu pẹlu awọn iṣedede ti a ti sọ.Parallelism ti ko dara yoo ja si ni uneven titẹ ati ërún bibajẹ nipa agbara.Ti o ba ti fi agbara dimole ti o pọju, ërún yoo bajẹ ni rọọrun.Ti agbara dimole ti a fi lelẹ ba kere ju, olubasọrọ ti ko dara ati itusilẹ ooru yoo ni ipa lori ohun elo naa.
5. Awọn titẹ Àkọsílẹ ninu olubasọrọ pẹlu awọn cathode dada ti awọn ërún gbọdọ wa ni annealed
Ṣeduro Agbara Dimole
| Chips Iwon | Dimole Force Iṣeduro |
| (KN) ± 10% | |
| Φ25.4 | 4 |
| % 30 tabi Φ30.48 | 10 |
| Φ35 | 13 |
| %38 tabi Φ40 | 15 |
| Φ50.8 | 24 |
| Φ55 | 26 |
| Φ60 | 28 |
| Φ63.5 | 30 |
| Φ70 | 32 |
| Φ76 | 35 |
| Φ85 | 45 |
| Φ99 | 65 |